Yüksek Lisans Tez Başlığı ve Tez Danışmanı  :

"SCHOTTKY METALİNİN KALINLIĞI ve H₂ TAVLAMASININ Au/n-GaAs İYOTLARININ KARAKTERİSTİK PARAMETRELERİ ÜZERİNE ETKİLERİ", 2004, Atatürk Üniversitesi, Fen Bilimleri Enstitüsü Erzurum.

Tez Danışmanı: Yrd. Doç.Dr. Mehmet BİBER, Atatürk Üniversitesi.

Doktora Tezi Başlığı ve  Danışmanı : 

"H₂ ÖNTAVLAMALI Au/n-GaAs DİYOTLARDA ELEKTRİKSEL KARAKTERİSTİKLERİN SCHOTTKY METAL KALINLIĞI VE SICAKLIĞA BAĞLI DEĞİŞİMİNİN İNCELENMESİ”, 2009, Atatürk Üniversitesi, Fen Bilimleri Enstitüsü Erzurum.

Tez Danışmanı: Doç.Dr. Mehmet BİBER, Atatürk Üniversitesi.

ESERLER

A. Uluslararası SCI sınıfı dergilerde yayımlanan makaleler :

  A1. Ö Güllü, M Biber, R L Van Meirhaeghe and A Türüt, Thin Solid Films 516 (2008) 7851–7856. "Effects Of The Barrier Metal Thickness And Hydrogen Pre-Annealing On The characteristic Parameters Of Au/n-GaAs Metal-Semiconductor Schottky Contacts"

  A2. Ö Güllü, M  Biber, S  Duman,  and  A  Türüt, Applied Surface Science 253 (2007) 7246–7253. "Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature”

  A3. Ö Güllü*, M  Biber, and  A  Türüt, J. Mater. Sci.: Mater. Electron. (2008) 19: 986–  991.  “Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions”

  A4. Ö Güllü*, M Çankaya, Ö Barış, and A Türüt, Appl. Phys. Lett. 92, 212106 (2008). “DNA-modified indium phosphide Schottky device”

  A5. Ö Güllü*,  F. Demir,  F E Cimilli,  and  M Biber, Vacuum 82 (2008) 789–793.

"Gamma Irradiation-Induced Changes At The Electrical Characteristics of Sn/P-Si Schottky Contacts"

  A6. Ö Güllü*,  Ö Barış, M  Biber  and   A  Türüt, Applied Surface Science 254 (2008) 3039–3044. “Laterally Inhomogeneous Barrier Analysis of the Methyl Violet/p-Si Organic/Inorganic Hybrid Schottky Structures”

  A7. Ö Güllü*, M Çankaya, Ö Barış, M Biber, H Özdemir, M Güllüce and A Türüt, Applied Surface Science 254 (2008) 5175–5180. “DNA- Based Organic-On-Inorganic Semiconductor Schottky Structures”

  A8. Ö Güllü*, M. Çankaya, M Biber, and A Türüt, J. Phys. D: Appl. Phys. 41 (2008) 135103 (7pp). “Gamma irradiation-induced changes at the electrical characteristics of organic-based schottky structures”

  A9. Ö Güllü*, M Çankaya, M Biber, and A Türüt, J. Phys.: Condens. Matter 20 (2008) 215210 (6pp). “Fabrication And Electrical Properties of Organic-on-Inorganic Schottky Devices “

  A10. Ö Güllü*, Ş Aydogan, M Biber, and A Türüt, Vacuum 82 (2008) 1264–1268.

“Fabrication and Electrical Characteristics of Al/PSP/n-Si/AuSb structure“

  A11. Ö Güllü* and A Türüt, Solar Energy Materials & Solar Cells 92 (2008) 1205– 1210.  “Photovoltaic And Electronic Properties of Quercetin/P-Inp Solar Cells”

  A12. Ö Güllü*, S Aydogan K Şerifoğlu and A Türüt, Nuclear Instruments and Methods in Physics Research A 593 (2008) 544– 549. “Electron irradiation effects on the organic-on-inorganic silicon Schottky structure”

  A13. Ö Güllü*, M Çankaya, Ö Barış, and A Türüt, Microelectronic Engineering 85 (2008) 2250–2255. “DNA- Based Organic-On-Inorganic Semiconductor Schottky Structures: Barrier enhancement and Temperature effect issues”

  A14. S. Asubay, Ö Güllü, A Türüt, Applied Surface Science 254 (2008) 3558–3561

        . “Determination of the laterally homogeneous barrier height of thermally annealed and

           unannealed Au/p-InP/Zn-Au Schottky barrier diodes”

  A15. M Biber, Ö Güllü, S Forment, R L Van Meirhaeghe and A Türüt, Semicond. Sci. Technol. 21 (2006) 1-5.  "The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes"

  A16. G Güler, Ö Güllü, Ö F Bakkaloğlu and A Türüt, Physica B: Condensed Matter 403 (2008) 2211–2214. “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition”

  A17. M E Aydın, Ö Güllü, and N Yıldırım, Physica B: Condensed Matter 403 (2008) 131–138. "Temperature Dependence of Current-Voltage Characteristics of Sn/p-Si Schottky Contacts”

  A18. Ö Güllü*, A Türüt and S Asubay, J. Phys.: Condens. Matter 20 (2008) 045215 (6pp). “Electrical Characterization of Organic-on-Inorganic Semiconductor Schottky Structures”

  A19. S Asubay, Ö Güllü,  B Abay, A Türüt, and A Yılmaz, Semicond. Science and Tech. 23 (2008) 035006 (6pp). “Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes”

  A20. Ö Güllü*, Ş Aydogan, and A Türüt, Microelectronic Engineering 85 (2008) 1647–1651. “Fabrication and Electrical Characteristics of Schottky Diode Based on Organic Material”

  A21. Ö Güllü*, S Aydogan and A Türüt, Semicond.  Sci. Technol. 23 (2008) 075005 (5pp). “Fabrication And Electrical Properties of Al/Safranin T/n-Si/AuSb Structure”

  A22. Ş Aydogan, Ö Güllü, and A Türüt, Materials Science in Semiconductor Processing 11 (2008) 53–58

“Fabrication and Electrical Characteristics of Organic (MG)-On-Inorganic Semiconductor Schottky Devices“

   A23. S Aydogan, Ö Güllü*, and A Türüt, Physica Scripta, 79 (2009) 035802 (6pp)

“Fabrication and Electrical Characterization of Silicon Schottky Device Based On Organic Material”

  A24. G. Güler, Ö Güllü, Ş Karataş, and Ö.F. Bakkaloglu, Chin. Phys. Lett. 26 (6) (2009) 067301

“Electrical characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements”

   A25. M Çakar, Ö Güllü*, N. Yıldırım and A Türüt, Journal of Electronics Materials 38 (9) (2009) 1995-1999.

“Electrical properties of organic-inorganic semiconductor device based on Rhodamine 101”

  A26. S Asubay, Ö Güllü*, and A Türüt, Vacuum 83 (12) (2009) 1470-1474

“Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes.”

  A27. Ö Güllü* , International Journal of Photoenergy 2009 (2009) 374301.

“Impedance And Interface Properties Of Al/Methyl Red/P-Inp Solar Cell”

  A28. G. Güler, Ş. Karataş, Ö Güllü, Ö.F. Bakkaloğlu,  Journal of Alloys and Compounds, 486 (2009) 343-347.

“The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes”

  A29. S Aydogan, Ö Güllü, Microelectronic Engineering 87 (2010) 187.

“A study of the rectifying behaviour of organic-based Schottky device”

  A30. Ö Güllü*, Microelectronic Engineering 87 (2010) 648.

“Ultrahigh (100%) Barrier Modification Of n-InP Schottky Diode By DNA Bio-Polymer Nanofilms”

  A31. Ö Güllü* and A Türüt, Journal of Applied Physics 106, 103717 (2009)

            “Electrical analysis of organic interlayer based metal/interlayer/semiconductor diode structures”

  A32. İbrahim. Y. Erdoğan and Ö Güllü*, Journal of Alloys and Compounds 492 (2010) 378-383.

           “Optical And Structural Properties of CuO Nanofilm: Its Diode Application”

   A33. Ö Güllü*, S. Asubay, S. Aydogan and A. Türüt,  Physica E  42(5) (2010) 1411-1416.

           “Electrical Characterization of The Al/New Fuchsin/n-Si Organic-Modified Device”

   A34. Ö Güllü* , T. Kilicoglu, A. Turut,   Journal of Physics and chemistry of Solids 71 (2010) 351-356

           “Electronic Properties of the Metal/ Organic Interlayer /Inorganic Semiconductor Sandwich  Device”

   A35. Ö Güllü*, S. Asubay, M  Biber, T. Kılıçoğlu and  A  Türüt, Eur. Phys. J. Appl. Phys. 50  (2010) 10401.

           “Electrical characteristics of the Safranine T/p-Si Organic/Inorganic semiconductor devices”

   A36. İbrahim. Y. Erdoğan and Ö Güllü*,   Applied Surface Science (In Press) 2010.

           “Silicon MIS Diodes with Cr2O3 Nanofilm: Optical, Morphological/Structural and Electronic Transport Properties”

   A37. S. Asubay, Ö Güllü,  International Journal of Electronics  (In Press) 2010.

           “Current-Voltage And Capacitance-Voltage Characteristics of Fe/P-Inp Schottky Barriers”

    A38. Ö Güllü* and A. Türüt, Journal of Vacuum Science and Tech. B  (In Press) 2010.

           “n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties”

B. Ulusal ve Uluslararası bilimsel toplantılarda sunulan ve bildiri özet kitabında basılan bildiriler :

        B1.  Ö Güllü, M. Biber, “Metal-Yarıiletken Arayüzey Oluşumunda Metal Etkisi”. TFD 23. International Physics Congress, 2005, Muğla, Türkiye. (A1 ile ilişkili)

         B2.  Ö Güllü, S. Duman, M. Biber, “Temperature Dependence Of Characteristics Of The Hydrogen Treated Au/n-GaAs Rectifying Diodes”. BPU 6. International Physics Congress, 2006, İstanbul, Türkiye. (A2 ile ilişkili).

      B3.  Ö Güllü, M. Biber, Ş. Aydoğan, A. Türüt,  “Temperature Dependent Electrical Characteristics Of The Hydrogen Pre-Annealed Au/n-GaAs Schottky Contacts”. TFD 24. International Physics Congress, 2007, Malatya, Türkiye. (A2 ile ilişkili).

B4. Ö Güllü, M. Biber, A. Türüt, “Au/n-GaAs Schottky Kontaklarda Metal Kalınlığının Diyot Parametreleri Üzerindeki Etkilerinin İncelenmesi”.  TFD 22. National Physics Congress, 2004, Bodrum, Türkiye. (A1 ile ilişkili).

B5.  M. Biber, Ö Güllü, A. Türüt, “H₂ Tavlaması ve Metal Kalınlığı ile Au/n-GaAs Schottky Kontakların Engel Yüksekliğinin Kontrol Edilmesi”, 11. Yoğun Madde Fiziği-Ankara Toplantısı, 2004, Ankara, Türkiye. (A1 ile ilişkili).

B6. Ş. Karataş, G. Güler, Ö Güllü, Ö. F. Bakkaloglu, “The determination of electrical Chararacteristics of Co/n-Si Schottky contacts”. TFD 25. International Physics Congress, 2008, Bodrum, Türkiye.

B7. Ş. Karataş, G. Güler, Ö Güllü, Ö. F. Bakkaloglu. “Annealing temperature dependent electrical properties of Ni/p-Si (1 0 0) Schottky diodes”. TFD 25. International Physics Congress, 2008, Bodrum, Türkiye.

B8.  E. Özerden, Ç. Nuhoğlu, A. Türüt, Ş. Aydoğan ve Ö Güllü. “Pb/p-Si Schottky diyotların Sıcaklığa bağlı I-V ve C-V karakteristikleri”. Geleneksel Erzurum Fizik Günleri-II, 2005, Erzurum, Türkiye.

B9. Ö Güllü, T. Kılıçoğlu, A. Türüt, “DNA BIOMOLECULAR FILM-BASED SCHOTTKY ELECTRONIC DEVICES: ELECTRONIC AND OPTICAL CHARACTERIZATION”.  2nd International Biophysics Congress and Biotechnology at GAP& the 2 1st National Biophysics Congress, 2009, Diyarbakir, Türkiye.